Laplace Reduced Pressure Horizontal Oxidation/Annealing System LOX430
Laplace Reduced Pressure Horizontal Oxidation/Annealing System LOX430

Laplace's latest horizontal reduced-pressure oxidation annealing system can be applied to the oxidation annealing of conventional Al-BSF solar cells, P-PERC solar cells and N-TOPCon solar cells。

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Sales E-mail:sales@laplace-tech.cn
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Application characteristics


This equipment is suitable for 156-210mm silicon wafer production, which can help customers reduce fixed asset investment and operating costs.


1. Put the film horizontally, high utilization of tube space, not only the energy consumption is low, but also the highest production capacity in the industry

2. The direction of the silicon wafer is consistent with the direction of the airflow, the silicon wafer has a small obstruction to the airflow, and the uniformity between the chip and the chip is better;

3. Self-weight extrusion, reduce the gap between silicon wafers, controllable winding diffussion/winding plating;

4. Horizontal placement of wafers is more suitable for the production of super-large and ultra-thin silicon wafers;

5. The battery technology has high applicability and versatility, and can be used in various battery structures such as PERC and TOPCon;

6. The modular design of the whole machine has good compatibility and can be upgraded and converted with each other;



拉普拉斯低压水平磷扩散系统 LRP370/05

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