Ultra-high temperature Oxidation furnace Bhadra ™ series BHO200 for SiC/GaN-based semiconductor devices
Ultra-high temperature Oxidation furnace Bhadra ™ series BHO200 for SiC/GaN-based semiconductor devices
You can consult through the following phone or email
Sales E-mail:sales@laplace-tech.cn
Contact Number:0755-28329695 (曲先生)
  • Product Description
  • Data and Pictures


Item

High temperature oxidation furnace

Functions

•  Used in high temperature oxidation processes of SiC and GaN

•  Meet the vacuum/atmosphere high temperature oxidation process

Important parameters

•  Maximum wafer size: meet the requirements of wafer process below 6 inches

•  Maximum loading capacity: 50 slides/batch

•  Maximum heating temperature: 1500℃

Loading and unloading method

•  Vertical vertical lift

•  Vertical vacuum sealing system



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