Ultra-high temperature Annealing furnace Bhadra ™ series BHA200 for SiC/GaN-based semiconductor devices
Ultra-high temperature Annealing furnace Bhadra ™ series BHA200 for SiC/GaN-based semiconductor devices
You can consult through the following phone or email
Sales E-mail:sales@laplace-tech.cn
  • Product Description
  • Data and Pictures


Item

High temperature annealing activation furnace

Functions

•  Used for high temperature annealing and activation processes of such as SiC and GaN

•  Meet the activation processs of various vacuum and atmosphere high temperature annealing

Important parameters

•  Maximum wafer size: meet the requirements of wafer process below 6 inches

•  Maximum loading capacity: 50 slides/batch

•  Maximum heating temperature: 2000℃

Loading and unloading method

•  Vertical vertical lift

•  Vertical vacuum sealing system



Related Recommend

Laplace Reduced Pressure Horizontal Phosphorus Diffusion System  LRP430
Laplace Reduced Pressure Horizontal Phosphorus Dif...
Laplace Reduced Pressure Horizontal Boron Diffusion System  LRP430
Laplace Reduced Pressure Horizontal Boron Diffusio...
Laplace Reduced Pressure Horizontal Oxidation/Annealing System LOX430
Laplace Reduced Pressure Horizontal Oxidation/Anne...
Laplace Low Pressure Horizontal Chemical Vapor Deposition System  LPCVD LLP430
Laplace Low Pressure Horizontal Chemical Vapor Dep...