LPCVD Pindola ™ series PLX300 for silicon-based semiconductor devices
LPCVD Pindola ™ series PLX300 for silicon-based semiconductor devices
You can consult through the following phone or email
Sales E-mail:sales@laplace-tech.cn
Contact Number:0755-28329695 (曲先生)
  • Product Description
  • Data and Pictures

Model

LPCVD(PLX300)

Funcitons

•  For growth of thin film materials: silicon dioxide(SiO2), silicon nitride(Si3N4), polysilicon, oxygen-doped polysilicon, phosphorus-doped polysilicon, boron-doped polysilicon, graphene, carbon nanotubes

•  LTO、TEOS、Si3N4、LP-POLY、BPSG

parameters

•  Wafer size 2~8 inch

•  Loading 1~5 tubes

•  Temperature control accuracy of constant temperature zone

•  Single point temperature stability

uniformity

•  TEOS thin film:≤2% within wafer,≤2% between wafers,≤2% between batchs

•  POLY :≤3% within wafer,≤3% between wafers,≤3% between batchs


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